Die shrinks have long been proclaimed as the way to lower power and higher speed. On the other hand, for about as many years, the issues of leakage currents has been known, that is, with every die shrink, the ratio between leakage and operating currents has gone in the wrong direction at an alarming rate. New process technologies targeting the substrate rather than the actual interconnect process are, therefore, becoming the focus of RD, from Low-K substrates as used in graphics processors to Silicon-On-Insulator, a technology developed by IBM in the 1950ies.